設施農業：節能栽培與滅菌【材料科學與工程學系武東星教授】

論文篇名 英文：Growth and characterization of co-sputtered aluminum-gallium oxide thin films on sapphire substrates
中文：探討藍寶石基板上共濺鍍鋁 - 鎵氧化物薄膜之成長與特性
期刊名稱 Journal of Alloys and Compounds
發表年份,卷數,起迄頁數 2018, 765, 894-900
作者 Chao-Chun Wang, Shuo-Huang Yuan, Sin-Liang Ou, Shiau-Yuan Huang , Ku-Yen Lin ,Yi-An Chen , Po-Wen Hsiao , Dong-Sing Wuu*(武東星)
DOI 10.1016/j.jallcom.2018.06.270
中文摘要 利用共濺鍍Al和Ga2O3靶與基板溫度600℃的條件下，將氧化鋁鎵（AGO）膜沉積在c-平面藍寶石上，之後在900℃下進行退火製程以提高其結晶品質。對Al靶使用直流電（0,5,10,30,50和70 W）對於AGO薄膜的結構、光學和組成特性的影響進行了相關研究。退火後，對Al靶使用0-50W的DC功率下製備的膜均顯示具有（201）平面族的單晶結構。在10W的DC功率下生長的膜在退火後與其他試片相比具有最佳的結晶品質。隨著DC功率從0增加到70W，AGO薄膜的Al組成從0增加到6.08 at.％，而其能隙從4.89增加到5.19 eV。 X射線光電子能譜研究證明，當直流功率的增加時，AGO薄膜的Ga 2p3/2峰強度（1117.9 eV）會降低，而Al 2p峰強度（74.6 eV）隨之增加。金屬 - 半導體 - 金屬光感測器使用以10W的DC功率沉積並經過退火製程的AGO薄膜，具有5.7×10 9 A的最大光電流和1.5×104（@ 2V和230nm）的開/關電流比（Ion / Ioff）。 該元件的更佳優異的光電特性可歸因於AGO膜（DC功率：10W）具有較佳的結晶品質，O /（Al Ga）比接近1.5的最佳值。我們的研究結果表明，AGO薄膜可以成功透過磁控濺鍍技術製備，這在深紫外應用上具有很大的潛力。
英文摘要 Aluminum gallium oxide (AGO) films were deposited on c-plane sapphire by co-sputtering of Al and Ga2O3 targets at a substrate temperature of 600 oC, and then annealed at 900 oC to enhance their crystal quality. The effect of DC power (0, 5, 10, 30, 50 and 70 W) for Al target on the structural, optical and compositional characteristics of AGO films were investigated. After annealing, the films prepared at the DC powers of 0-50W for Al target all exhibited the single crystalline structure with the ( 201) plane family. The annealed film grown at the DC power of 10W possessed the highest crystal quality than the others. With increasing the DC power from 0 to 70W, the Al composition of AGO film increased from 0 to 6.08 at.%, while its bandgap increased from 4.89 to 5.19 eV. X-ray photoelectron spectroscopy studies indicate the intensity of Ga 2p3/2 peak (1117.9 eV) for the AGO film decreases, whereas the intensity of Al 2p peak (74.6 eV) increases with increasing the DC power. The metal-semiconductor-metal photodetector with the annealed AGO film deposited at the DC power of 10Wpossesses the largest photocurrent of 5.7×10 9 A and the on/off current ratio (Ion/Ioff) of 1.5×104 (@2 V and 230 nm). The better optoelectronic performance of this device was attributed that the AGO film (DC power: 10 W) had a higher crystal quality, the O/(Al Ga) ratio close to the optimum value of 1.5. Our results present the AGO films can be successfully prepared via sputtering technique, which are highly potential for deep-ultraviolet applications.