Facility Agriculture: Energy Saving and SterilizationDepartment of Chemical Engineering / Chen, Chih-Ming / Distinguished Professor
設施農業:節能栽培與滅菌【化學工程學系/陳志銘特聘教授】
論文篇名
英文:Effects of Initial Morphology on Growth Kinetics of Cu6Sn5 at SAC305/Cu Interface During Isothermal Aging
中文:初始形態對等溫老化過程中 SAC305/Cu 界面 Cu6Sn5 生長動力學的影響
期刊名稱 MATERIALS
發表年份,卷數,起迄頁數 2022, 15, 4751
作者 Lee, Jia-Yi; Chen, Chih-Ming(陳志銘)*
DOI 10.3390/ma15144751
中文摘要 銲料/銅接點是負責微電子互連的重要組件,通過液/固反應建構銲料/銅接點伴隨接點界面處 Cu-Sn 介金屬化合物的生成。隨著液/固反應時間增加,Cu6Sn5介金屬化合物在厚度和形態上表現出顯著差異,此初始特徵之差異對隨後等溫時效過程中Cu6Sn5生長動力學產生顯著影響。SAC305 銲料在銅電鍍層上於265 °C 反應 1 60 分鐘以產生具有不同厚度和形態的Cu6Sn5,將製成的 SAC305/銅接點樣品在 200 °C 下老化 72 360 小時,藉以研究Cu6Sn5的生長動力學。結果表明,厚度和形貌的初始特徵顯著影響Cu6Sn5在隨後的固/固反應過程中的生長動力學。延長 60 分鐘的液/固反應時間 (L/S-60) 產生具有較大晶粒尺寸和較厚厚度的扇貝型Cu6Sn5,減少了快速擴散路徑(晶界)的數量和濃度梯度的大小,從而減緩Cu6Sn5的生長速度。根據生長動力學分析,L/S-60樣品的Cu6Sn5生長速率常數可顯著降低至0.151 µm/h 0.5,與L/S-1樣品相比顯著降低70%0.508 µm/h 0.5L/S 反應時間為 1 分鐘)。
英文摘要 Solder/Cu joints are important components responsible for interconnection in microelectronics. Construction of the solder/Cu joints through liquid/solid (L/S) reactions accompanies the formation of the Cu–Sn intermetallic compounds (IMCs) at the joint interface. The Cu6Sn5 IMC exhibits remarkable distinctions in thickness and morphology upon increasing the L/S reaction time. Effects of the initial characteristics of thickness and morphology on the growth kinetics of Cu6Sn5 during subsequent isothermal aging were investigated. SAC305 solder was reflowed on a Cu electroplated layer at 265 °C for 1 to 60 min to produce the Cu6Sn5 IMC with different thickness and morphology at the SAC305/Cu interface. The as-fabricated SAC305/Cu joint samples were aged at 200 °C for 72 to 360 h to investigate the growth kinetics of Cu6Sn5. The results show that the initial characteristics of thickness and morphology significantly influenced the growth kinetics of Cu6Sn5 during the subsequent solid/solid (S/S) reaction. A prolonged L/S reaction time of 60 min (L/S-60) produced a scallop-type Cu6Sn5 IMC with a larger grain size and a thicker thickness, which reduced the quantity of fast diffusion path (grain boundary) and the magnitude of concentration gradient, thus slowing down the growth rate of Cu6Sn5. According to the growth kinetics analysis, the growth rate constant of Cu6Sn5 could be remarkably reduced to 0.151 µm/h0.5 for the L/S-60 sample, representing a significant reduction of 70 % compared to that of the L/S-1 sample (0.508 µm/h0.5 for L/S reaction time of 1 min).
發表成果與本中心研究主題相關性 探討先進微電子接點反應動力學,了解初始製程條件對後續產品應用的影響。