Facility Agriculture: Energy Saving and Sterilization【Department of Applied Materials Optoelectronic Engineering, National Chi Nan University / Wuu, Dong-Sing / President / Professor】
設施農業：節能栽培與滅菌【國立暨南國際大學應用材料及光電工程學系/國立中興大學材料科學與工程學系/武東星 校長/客座教授】
論文篇名 英文：Structural design and performance improvement of flip-chip AlGaInP mini light-emitting diodes
中文：覆晶型磷化鋁銦鎵紅光發光二極體之結構與特性優化
期刊名稱 Semiconductor Science and Technology
發表年份,卷數,起迄頁數 2021, 36, no.095008
作者 Chang, Kai-Ping; Tsai, Yu-Tin; Yen, Chao-Chun; Horng, Ray-Hua*; Wuu, Dong-Sing Wuu(武東星)*
DOI 10.1088/1361-6641/ac1055
中文摘要 具有 p 和 n 橫向電極結構和更大發光面積的倒裝晶片 (FC) 鋁鎵銦磷 (AlGaInP) 微型發光二極體 (mLED) 在集成局部可調光的紅色、綠色和藍色 mLED 方面具有巨大潛力並應用於開發新一代 LED 背光液晶顯示器的區域。此研究中，使用晶片鍵合和轉移技術方法製造具有 9 6 mil 尺寸的 FC AlGaInP mLED。我們通過蝕刻歐姆接觸並優化 FC mLED 的特定接觸電阻，提出了圖案化的 n 砷化鎵 (GaAs) 磊晶層。光輸出強度圖像表明，這種蝕刻技術提高了電流分佈的均勻性，與模擬結果相符。與傳統的 FC mLED 相比，具有圖案化 n-GaAs 層的 FC mLED 的輸出功率從 3.4% 增加到 4.5%，插座效率提高了 1.04%。此外，Ag 被用作圖案化的 n-GaAs 而非 AuGe 上的反射器。與帶有 AuGe 反射器的 FC mLED 相比，帶有 Ag 反射器的 FC mLED 的輸出功率提高了 3.5%–8.2%。最後，用環氧樹脂和遠場輻射模式封裝的 FC mLED 表明封裝的 FC mLED 具有更小的發散角和更窄的視角
英文摘要 Flip-chip (FC) aluminum gallium indium phosphide (AlGaInP) mini light-emitting diodes (mLEDs) with p and n lateral electrode structures and a larger light-emitting area have significant potential for integrating red, green, and blue mLEDs of locally dimmable zones for developing new-generation LED-backlit liquid crystal displays. Herein, an FC AlGaInP mLED having 9 × 6 mil dimensions is fabricated using wafer bonding and transfer technology methods. We propose a patterned n-gallium-arsenide (GaAs) epilayer by etching for ohmic contact and optimizing the specific contact resistance of an FC mLED. The light-output intensity images demonstrated that this etching process improved the uniformity of current distribution and matched the simulation results. Compared with conventional FC mLEDs, the output powers of FC mLEDs with a patterned n-GaAs layer increased from 3.4% to 4.5% and the wall-plug efficiency improved by 1.04%. Moreover, Ag was applied as a reflector on patterned n-GaAs rather than AuGe. The output power of FC mLEDs with an Ag reflector showed a 3.5%–8.2% improvement over FC mLEDs with an AuGe reflector. Finally, FC mLEDs that were encapsulated with epoxy and far-field radiation patterns indicated that packaged FC mLEDs had a smaller divergence angle and narrower viewing angle.
發表成果與本中心研究主題相關性 針對紅光覆晶LED提出光輸出改善方案，包括結構穿透率評估、晶片貼合壓力、Mesa蝕刻、退火溫度最佳化等，並藉由蝕刻n-GaAs提高垂直方向阻抗，改善電流均勻性，由於n-GaAs會吸收630 nm波段的光，降低n-GaAs面積，因此提出三種n-GaAs蝕刻圖案，優化提高光輸出功率，並降低電流擁擠效應，可應用於農業栽培之高效率光源。