新穎材料農業：友善環境農業新穎材料研發與安全評估【物理學系/何孟書教授】
| 論文篇名 | High quality single-crystalline β-Ga2O3 nanowires: Synthesis to non-volatile memory application |
| 期刊名稱 | Nanomaterials |
| 發表年份,卷數,起迄頁數 | 2021, 11(8), 2013 |
| 作者 | Sivakumar, Chandrasekar(陳德森); Tsai, Gang-Han; Chung, Pei-Fang(鍾佩芳); Balraj, Babu; Lin, Yen-Fu; Ho, Mon-Shu(何孟書)* |
| DOI | 10.3390/nano11082013 |
| 中文摘要 | 電阻式隨機存取存儲器 (ReRAM)是下一代有前途的非揮發性存儲器之一。與其他新興的揮發性存儲器相比，它具有巨大的優勢。在不同的材料中，介電薄膜作為一種非揮發性開關材料已被科學研究界廣泛研究了幾十年，並提出其優點和缺點。然而，與介電膜相比，關注於電阻存儲器的低維材料的較少。特別是，β-Ga2O3 是一種具有電阻開關的大功率電子材料，但是，低維度 β-Ga2O3 奈米線在電阻存儲器應用中並未被進一步探索，可能是樣品製備的困難。在本文中，我們研究了一維奈米線受不同極性電壓的電阻轉換現象，並提出了可能的電阻轉換和電子傳導機制。我們在 Si (100) 基板上, 利用VLS 生長技術及Au 奈米顆粒作為催化劑成長高密度的 β-Ga2O3 一維奈米線。通過SEM、TEM和XRD分析結構特徵。此外，也利用EDS、CL 和 XPS 結合特徵分析證實元素組成、空隙缺陷點中可能的中間吸收位點、結合特性以及各種氧化物種的存在，這對 ReRAM 性能至關重要。我們將單一 β-Ga2O3 奈米線製成雙極性ReRAM 器件的切換和性能, 提出了基於導電細絲通過氧缺陷點形成和湮滅的轉換機制, 並討論了 HRS 和 LRS 狀態下可能的電子傳導機制。 |
| 英文摘要 | One of the promising non-volatile memories of the next generation is Resistive Random-Access Memory (ReRAM). It has vast benefits in comparison to other emerging non-volatile memories. Among different materials, dielectric films have been extensively studied by the scientific research community as a non-volatile switching material over several decades and reported tons of advantages and downsides. However, the attention given to the low dimensional materials for resistive memory is less compared to the dielectric film. Especially, β-Ga2O3 is one of the promising materials for high power electronics and exhibits resistive switching phenomenon. But, low dimensional β-Ga2O3 nanowires are not explored in resistive memory applications, which hinders further developments. In this article, we have studied the resistance switching phenomenon using controlled electron flow in the 1D nanowires and proposed the possible resistive switching and electron conduction mechanism. The high-density β-Ga2O3 1D-nanowires on Si (100) substrates have been produced by the VLS growth technique using Au nanoparticles as a catalyst. Structural characteristics are analyzed by SEM, TEM, and XRD. Besides, EDS, CL, and XPS binding feature analyses have confirmed the composition of individual elements, possible intermediate absorption sites in the bandgap, and bonding characteristics along with the presence of various oxygen species, which is crucial for the ReRAM performances. The forming-free bipolar resistance switching of a single β-Ga2O3 nanowire ReRAM device and performance are discussed in detail. The switching mechanism based on the formation and annihilation of conductive filaments through the oxygen vacancies is proposed, and possible electron conduction mechanisms in HRS and LRS states are discussed. |
| 發表成果與本中心研究主題相關性 |
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