Facility Agriculture: Energy Saving and Sterilization【Department of Materials Science Engineering / Lin, Chia-Feng / Professor】
設施農業：節能栽培與滅菌【材料科學與工程學系林佳鋒教授】
論文篇名 InGaN Resonant Microcavity with n+-porous-GaN/p+-GaN Tunneling Junction
期刊名稱 IEEE Electron Device Letters
發表年份,卷數,起迄頁數 2021 
作者 Lin, Chia-Feng(林佳峰)*; Zhang, Yu-Ting; Wang, Cheng-Jie; Chen, Yi-Yun; Shiu, Guo-Yi; Han, Jung*
DOI 10.1109/LED.2021.3111616
中文摘要 利用磊晶結構與電化學蝕刻直接完成氮化銦鎵面射型雷射結構，具有上下多孔隙布拉格反射鏡結構，在電流注入下，成功量測到1.9奈米線寬、434開放雷射發光特性。
英文摘要 InGaN-based resonant cavity light-emitting diode (RC-LED) structures with top and bottom porous-GaN distributed Bragg reflectors (DBRs) were demonstrated. Epitaxial
n+-GaN:Si/n-GaN:Si stack structures were transformed into top/bottom porous-GaN:Si/n-GaN:Si DBRs through a doping-selective electrochemical wet etching process. The n+-porous-GaN/p+-GaN tunneling junction structure was designed for the current injecting into the InGaN active layer. The line-widths of the electroluminescence spectra were reduced from 23.3 nm at 434.0 nm to 1.9 nm at 434.1 nm due to the resonant microcavity effect.
 
發表成果與本中心研究主題相關性 本篇文章開發具量產可行性之藍紫光面射型雷射結構，可應用於植物螢光標記檢測、激發光源，取代傳統汞燈光源，並可應用於紫光雷射陣列技術開發。