InGaN Resonant-Cavity Light-Emitting Diodes with Porous and Dielectric Reflectors | IDCSA, NCHU

InGaN Resonant-Cavity Light-Emitting Diodes with Porous and Dielectric Reflectors 2020-12-22

Facility Agriculture: Energy Saving and Sterilization【Department of Materials Science Engineering / Lin, Chia-Feng / Professor】
設施農業：節能栽培與滅菌【材料科學與工程學系林佳鋒教授】

論文篇名	英文：InGaN Resonant-Cavity Light-Emitting Diodes with Porous and Dielectric Reflectors 中文：具有多孔和介質反射器的 InGaN 諧振腔發光二極體
期刊名稱	APPLIED SCIENCES-BASEL
發表年份,卷數,起迄頁數	2021, 11(1), no.8
作者	Wang, Cheng-Jie; Ke, Ying; Shiu, Guo-Yi; Chen, Yi-Yun; Lin, Yung-Sen; Chen, Hsiang; Lin, Chia-Feng(林佳鋒)*
DOI	10.3390/app11010008
中文摘要	本篇文章主要是發表使用氮化銦鎵共振腔型藍紫光發光二極體，並搭配多孔隙布拉格反射鏡，成功完成指向性光源開發，中心波長為421奈米反射率達98 %成功開發出短共振腔發光元件，採用雷射激發產生光激發雷射光譜。
英文摘要	InGaN based resonant-cavity light-emitting diode (RC-LED) structures with an embedded porous-GaN/n-GaN distributed Bragg reflector (DBR) and a top dielectric Ta₂O₅/SiO₂ DBR were demonstrated. GaN:Si epitaxial layers with high Si-doping concentration (n⁺-GaN:Si) in the 20-period n+-GaN/n-GaN stacked structure were transformed into a porous-GaN/n-GaN DBR structure through the doping-selective electrochemical wet etching process. The central wavelength and reflectivity were measured to be 434.3 nm and 98.5% for the porous DBR and to be 421.3 nm and 98.1% for the dielectric DBR. The effective 1_ cavity length at 432nm in the InGaN resonant-cavity consisted of a 30 nm-thick Ta₂O₅ spacer and a 148 nm-thick InGaN active layer that was analyzed from the angleresolved photoluminescence (PL) spectra. In the optical pumping PL spectra, non-linear emission intensity and linewidths reducing effect, from 6.5 nm to 0.7 nm, were observed by varying the laser pumping power. Directional emission pattern and narrow linewidth were observed in the InGaN active layer with bottom porous DBR, top dielectric DBR, and the optimum spacer layer to match the short cavity structure.
發表成果與本中心研究主題相關性	開發具指向性藍紫光光源，使投射光源集中作為植物生長照射光源，提升效率與減少漏光耗能。