設施農業:節能栽培與滅菌【化學工程學系/陳志銘特聘教授】
論文篇名 | 英文:Electrodeposition of nanocrystalline Cu for Cu-Cu direct bonding 中文:應用於Cu-Cu直接接合的奈米晶Cu的電沉積 |
期刊名稱 | JOURNAL OF THE TAIWAN INSTITUTE OF CHEMICAL ENGINEERS |
發表年份,卷數,起迄頁數 | 2022, 132, 104127 |
作者 | Jhan, Jhih-Jhu; Wataya, Kazutoshi; Nishikawa, Hiroshi; Chen, Chih-Ming(陳志銘)* |
DOI | 10.1016/j.jtice.2021.10.027 |
中文摘要 | Cu-Cu直接接合是一種很有前途的技術,可以為新興的功率器件和汽車電子設備建構耐高溫接合結構,但主要挑戰是銅容易氧化和接合表面的固態原子擴散緩慢。在本研究中,使用電沉積在接合表面建構奈米晶銅,並在甲酸氣氛中進行直接接合,並以微觀結構和強度分析研究 Cu-Cu 接點的接合性能。接合強度分析顯示,通過直接接合兩個具有奈米晶體結構(平均晶粒尺寸 = 78 nm)的 Cu 表面,可以實現具有 71 MPa 高剪切強度的良好結合的 Cu-Cu 接點。微觀結構分析表明,伴隨著在接合界面處奈米晶形成的顯著晶粒生長有助於提高接合強度,歸因於奈米晶銅表面上原子擴散的增強效應。 |
英文摘要 | Cu-Cu direct bonding is a promising technology to construct a temperature resistant bonding structure for emerging power devices and vehicle electronics. The main challenge is the ease oxidation of Cu and slow solid-state atomic diffusion at the bonding surface. In this study, nanocrystalline Cu is constructed on the bonding surfaces using electrodeposition and direct bonding is carried out in a formic acid atmosphere. Microstructural and strength analyses are performed to investigate the bonding performance of the Cu-Cu joints. The bonding strength analysis indicates that a well-bonded Cu-Cu joint with a high shear strength of 71 MPa can be achieved by direct bonding of two Cu surfaces with a nanocrystalline structure (average grain size = 78 nm). Microstructural analysis shows that significant grain growth accompanying formation of twins at the bonding interface contribute to high bonding strength, which is attributed to enhanced atomic diffusion on the nanocrystalline Cu surfaces. |
發表成果與本中心研究主題相關性 | 開發新穎奈米晶銅電鍍沉積技術,提升Cu-Cu直接接合的可行性。 |