Facility Agriculture: Energy Saving and Sterilization【Department of Applied Materials Optoelectronic Engineering, National Chi Nan University / Wuu, Dong-Sing / President / Professor】
設施農業：節能栽培與滅菌【國立暨南國際大學應用材料及光電工程學系/國立中興大學材料科學與工程學系/武東星 校長/客座教授】
論文篇名 英文：Structural and photodetector characteristics of Zn and Al incorporated ZnGa2O4 films via co-sputtering
中文：Zn和Al通過共濺射摻入ZnGa2O4薄膜的結構和光電探測器特性
期刊名稱 RESULTS IN PHYSICS
發表年份,卷數,起迄頁數 2022, 33, 105206
作者 Singh, Anoop Kumar; Yen, Chao-Chun; Wuu, Dong-Sing(武東星)*
DOI 10.1016/j.rinp.2022.105206
中文摘要 使用射頻磁控濺射將摻入鋅和鋁的 ZnGa2O4 薄膜（ZGO:Zn 和 ZGO:Al）沉積在藍寶石基板上。系統地研究了Zn和Al的摻入對ZGO薄膜的微觀結構和光電性能的影響並相互比較。該研究表明，Al 的摻入增強了 ZGO 薄膜的特性，而 Zn 的摻入影響了 ZGO 薄膜的特性。退火後的 ZGO:Al 薄膜結晶度高，平均透射率 > 82%，寬帶隙為 5.18 eV。進行第一性原理計算以研究與 ZGO:Al 結構相關的缺陷。 Al 結合的 ZGO PD 表現出最佳的金屬-半導體-金屬光電探測器性能，光/暗電流比約為 104 級，響應度為 3.01 A/W（在 3 V 和 220 nm），證明了 ZGO PD 的響應度（0.25通過在 ZGO 薄膜中加入 Al，A/W) 可提高 12 倍。 ZGO:Al 薄膜特性的這種增強可歸因於高結晶性質和該薄膜中大量氧空位的形成。這些結果證明了摻鋁 ZGO 薄膜在寬帶隙器件和深紫外應用中的潛力。
英文摘要 Zn and Al-incorporated ZnGa2O4 films (ZGO:Zn and ZGO:Al) were deposited on sapphire substrates using radiofrequency magnetron sputtering in this work. The effects of Zn and Al incorporation on the microstructural andoptoelectronic properties of ZGO films were systematically investigated and compared with each other. This investigation revealed that incorporation of Al enhanced the characteristics of the ZGO film, whereas incorporation of Zn affected the characteristics of the ZGO film. The annealed ZGO:Al film revealed high crystallinity, average transmittance of > 82%, and wide-bandgap of 5.18 eV. First principles calculations were performed to investigate the defects associated with the ZGO:Al structure. The Al incorporated ZGO PD exhibited an optimum metal–semiconductor–metal photodetector achievement with a photo/dark current ratio of ~104 order and responsivity of 3.01 A/W (at 3 V and 220 nm), demonstrating the responsivity of ZGO PD (0.25 A/W) can be increased up to 12 times by incorporating Al in ZGO films. This enhancement in the characteristics of the ZGO:Al film can be ascribed to the high crystalline nature and the formation of significant amount of oxygen vacancies in this film. These results demonstrate the potential of Al incorporated ZGO films in wide-bandgap devices and deep-ultraviolet applications.
發表成果與本中心研究主題相關性 因UV-LED容易光衰退，因此開發與UV光感測器，進一步監測UV-LED之光衰退情形。開發寬能隙之複雜氧化物Al-doped ZnGa2O4材料，此具有優異的高溫化學穩定性，適合作為深紫外光感測器。透過濺鍍製程製備ZGO感測器，並藉由不同的快速退火溫度，將薄膜品質提升至準單晶結構，使提升光響應之效果，可應用於農業上之節能栽培與滅菌。