設施農業：節能栽培與滅菌【材料科學與工程學系武東星教授】

論文篇名 英文：Surface evolution and effect of V/III ratio modulation on etch-pit-density improvement of thin AlN templates on nano-patterned sapphire substrates by metalorganic chemical vapor deposition
中文：有機金屬氣相沉積法調控V/III元素比例探討氮化鋁薄膜於圖案化藍寶石基板表面的成長機制並改善其表面蝕刻密度
期刊名稱 Applied Surface Science
發表年份,卷數,起迄頁數 2018, 455, 1123-1130
作者 Tzu-Yu Wang, Chi-Tsung Tasi, Ku-Yen Lin, Sin-Liang Ou, Ray-Hua Horng, Dong-Sing Wuu*(武東星)
DOI 10.1016/j.apsusc.2018.06.017
中文摘要 通過金屬有機化學氣相沉積法使用V / III比調變和奈米圖案化藍寶石基板（NPSS）實現了低缺陷密度AlN模板膜。與使用高生長溫度（≥1250 oC）的高聚結厚度（>6μm）獲得的傳統高質量AlN / NPSS相比，本研究揭示了高結晶性的AlN，在較薄厚度(2.55 μm)與低溫度(1130°C)下磊晶得到的。它可以有效地延長加熱器壽命 並減少外延晶片的翹曲。由外延橫向過度生長支配的AlN / NPSS使得沿（1012）面的半峰值的全寬度顯著的從1640減少到714弧秒，最低的位錯密度大約為1×108 cm-2，超低蝕刻坑密度為2.3×105 cm-2。具壓縮應力的無裂紋AlN / NPSS是由於拉伸應力透過在圖案化區域上存在一些鑰匙形狀孔洞而釋放掉。細部有關AlN / NPSS的表面演變，機制和位錯行為的將被討論，並且這些結果證明這種低缺陷模板技術對於應用在AlGaN的元件應用具有高潛力。
英文摘要 A low defect-density AlN template film using V/III ratio modulation and nano-patterned sapphire substrate (NPSS) was achieved by metalorganic chemical vapor deposition. In contrast to conventional high-quality AlN/NPSS obtained with high coalescence thickness (> 6 μm) using high growth temperatures (≥1250 oC), this study reveals the high crystallinity of AlN with the lower thickness of 2.55 μm grown under a lower temperature of 1130 °C. It could effectively increase the heater lifetime and reduce the epi-wafer warpage. The growth of AlN/NPSS dominated by epitaxial lateral overgrowth achieves a dramatic reduction of full -width at half maximum values along (1012) plane from 1640 to 714 arcsec, and lowest dislocation density of approximately 1×108 cm−2, as well as a ultra-low etching pit density of 2.3×105 cm−2. The crack-free AlN/NPSS with a compressive stress owing to the tensile stress was relaxed by the existence of some key-shaped holes upon the patterned region. Details of the surface evolution, mechanism and dislocation behavior of AlN/NPSS will be discussed and these results demonstrate this low-defect template technique of high potential for AlGaN based device applications.