Facility Agriculture: Energy Saving and Sterilization【Department of Applied Materials Optoelectronic Engineering, National Chi Nan University / Wuu, Dong-Sing / President / Professor】
設施農業：節能栽培與滅菌【國立暨南國際大學應用材料及光電工程學系/國立中興大學材料科學與工程學系/武東星 校長/客座教授】
論文篇名 英文：Growth and characterization of co-sputtered Al-doped ZnGa2O4 films for enhancing deep-ultraviolet photoresponse
中文：用於增強深紫外光響應的共濺射 Al 摻雜 ZnGa2O4 薄膜的生長和特性研究
期刊名稱 Applied Surface Science
發表年份,卷數,起迄頁數 2021, 556, no.150714
作者 Singh, Anoop Kumar; Chen, Po-Wei; Wuu, Dong-Sing(武東星)*
DOI 10.1016/j.apsusc.2021.150714
中文摘要 本研究採用Al和ZGO之靶材在400℃基板溫度下共濺射和800℃熱退火的方法，並於c平面藍寶石上沉積了Al摻雜的ZnGa2O4 (ZGO)薄膜，以提高薄膜的結晶品質。在本研究中，金屬鋁靶的直流功率在0 ~ 50 W之間變化，並研究了直流功率對薄膜結構、光學和光電性能的影響。退火後，所有薄膜均呈現ZGO相的結晶性質。進一步的研究表明，在800℃退火條件下，20 W DC功率沉積的Al摻雜ZGO薄膜的晶體品質最高，能隙大小為5.18 eV。通過對Ga 2p3/2和Al 2p的x射線發射光譜測量，發現Al原子佔據了ZGO中的八面體，使Al─O─Ga成鍵。這種退火20 W的金屬-半導體-金屬之光電探測器搭配Al-doped ZGO可表現出的光電流與暗電流比率3.35×104和高響應率為3.01 A / W(在3 V和220奈米), 相比於退火0 W Al-doped ZGO之光電探測器，元件性能改善了12倍。
英文摘要 Al-doped ZnGa2O4 (ZGO) films were deposited on c-plane sapphire substrates by co-sputtering of Al and ZGO targets at a substrate temperature of 400 ℃ and thermally annealed at 800 ℃ to enhance their crystalline quality. In this investigation, the DC power for metallic Al target was varied from 0 to 50 W and its effect on structural, optical, and optoelectronic properties of these films were investigated. After annealing, all films exhibited the crystalline nature with the ZGO phase. Further, this investigation revealed that the 800 ℃ annealed Al-doped ZGO film deposited with the 20 W DC power possessed the highest crystalline quality among other films along with the wide-bandgap of 5.18 eV. The X-ray photoemission spectrum measurements revealed from the Ga 2p3/2 and Al 2p core-level spectra that the Al atoms occupy the octahedral sites, which makes Al─O─Ga bonding in the ZGO network. The metal–semiconductor-metal photodetector with this annealed 20 W Al-doped ZGO film exhibited the photocurrent to the dark current ratio of 3.35 × 104 and high responsivity of 3.01 A/W (at 3 V and 220 nm), which shows the enhancement in device performance about 12 times when compared with that of annealed 0 W Al-doped ZGO photodetector.
發表成果與本中心研究主題相關性  因UV-LED容易光衰退，因此開發與UV光感測器，進一步監測UV-LED之光衰退情形。開發寬能隙之複雜氧化物Al-doped ZnGa2O4材料，此具有優異的高溫化學穩定性，適合作為深紫外光感測器。透過濺鍍製程製備ZGO感測器，並藉由不同的快速退火溫度，將薄膜品質提升至準單晶結構，使提升光響應之效果，可應用於農業上之節能栽培與滅菌。