Facility Agriculture: Energy Saving and Sterilization【Department of Applied Materials Optoelectronic Engineering, National Chi Nan University / Wuu, Dong-Sing / President / Professor】
設施農業：節能栽培與滅菌【國立暨南國際大學應用材料及光電工程學系/國立中興大學材料科學與工程學系/武東星 校長/客座教授】
論文篇名 英文：Influence of Al doping on crystal structure, optical, and photoluminescence characteristics of ZnGa2O4 films
中文：Al摻雜對ZnGa2O4薄膜晶體結構、光學和光致發光特性的影響
期刊名稱 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
發表年份,卷數,起迄頁數 2022, 150, 106962
作者 Singh, Anoop Kumar; Yen, Chao-Chun; Chang, Kai-Ping; Wuu, Dong-Sing(武東星)*
DOI 10.1016/j.mssp.2022.106962
中文摘要 通過共濺射陶瓷 ZnGa2O4 (ZGO) 和 Al 濃度範圍為 0-5.35% 的金屬 Al 靶材，在 c 面藍寶石基板上生長了 Al 摻雜的 ZnGa2O4 (ZAG​​O) 薄膜熒光粉。系統研究了Al摻雜劑含量對ZAGO薄膜晶體結構和光學特性的影響。進行第一性原理計算以詳細研究 ZAGO 超晶胞中 Al 原子的優選位點。 X 射線衍射圖和透射電子顯微鏡證實了 1.65% ZAGO 薄膜的高結晶性。 Al 摻雜揭示了 ZAGO 薄膜的 5.32 eV 增強帶隙。利用 X 射線光電子能譜來確定 ZAGO 薄膜中的化學狀態以及化學計量的 Zn/Ga 比率。發現 ZAGO 薄膜的結晶度、光學和光致發光 (PL) 特性受 Al 摻雜、O/(Zn+Ga+Al) 和 Zn/Ga 比率的強烈影響。 PL光譜表現出從380nm擴展到600nm的寬帶，峰值位於525nm。含微量 Al (1.65%) 的 ZAGO 熒光粉改進的 PL 特性證明了相對較新的半導體材料系統 ZAGO 有望用於高結晶薄膜熒光粉。
英文摘要 Al-doped ZnGa2O4 (ZAGO) thin film phosphors were grown on the c-plane sapphire substrates by co-sputtering of ceramic ZnGa2O4 (ZGO) and metallic Al targets with the Al concentration in the range of 0–5.35%. A systematic investigation on the effects of Al dopant contents on the crystal structure and optical characteristics of ZAGO films has been conducted. First principle calculations were performed to investigate the preferable site of Al atoms in ZAGO supercell in detail. The high-crystalline nature of 1.65% ZAGO film was evidenced by X-ray diffraction patterns and transmission electron microscopy. Al doping revealed the enhanced bandgap of 5.32 eV for ZAGO films. The X-ray photoelectron spectroscopy was utilized in order to determine the chemical states as well as the stoichiometric Zn/Ga ratio in the ZAGO films. The crystallinity, optical, and photoluminescence (PL) characteristics of the ZAGO films are found strongly influenced by Al doping, O/(Zn+Ga+Al), and Zn/Ga ratio. The PL spectra exhibited the broad bands expanding from 380 to 600 nm with the peak located at 525 nm. The improved PL characteristics of ZAGO phosphors with trace Al (1.65%) demonstrate the promise of a relatively new semiconductor material system ZAGO for high-crystalline thin film phosphors.
 
發表成果與本中心研究主題相關性 PL光譜表現出從380nm擴展到600nm的寬帶，峰值位於525nm。含微量 Al (1.65%) 的 ZAGO 熒光粉改進的 PL 特性證明了相對較新的半導體材料系統 ZAGO 有望用於高結晶薄膜熒光粉，可以通過化學反應把具有螢光性的化學基團粘到生物大分子上，然後通過觀察示蹤基團發出的螢光來靈敏地探測這些生物大分子，可應用於農業上之菌類的追蹤。