Facility Agriculture: Intelligent SensorsGraduate Institute of Optoelectronic Engineering / Pei, Zingway / Distinguished Professor  
設施農業:智慧感測【光電工程研究所/裴靜偉特聘教授】

論文篇名
英文:Solution-Processed Titanium Oxide for Rear Contact Improvement in Heterojunction Solar Cells
中文:溶液製程二氧化鈦薄膜於異質接面太陽電池背接觸改善之研究
期刊名稱 ENERGIES
發表年份,卷數,起迄頁數 202013 (18), 4650
作者 Lee, Yu-Tsu; Lin, Fang-Ru; Pei, Zingway(裴靜偉)*
DOI 10.3390/en13184650
中文摘要 在這項工作中,我們展示了一種異質結矽太陽能電池,該電池利用化學生長的氧化鈦(TiOx)作為其背面的電子選擇性接觸層。用TiOx鈍化後表面,以減少載流子復合。反向飽和電流是載流子復合的指標,在背面沉積TiOx層後,其反向電流降低了4.4倍。隨著載子結合的減少,開路電壓從433 mV增加到600 mV,因此,功率轉換效率(PCE)從9.57 %增加到14.70 %。通過X射線光發射光譜法,表面鈍化歸因於在化學生長過程中形成的氧化矽界面層。這種鈍化導致TiOx鈍化的Si表面的表面複合速度為625 cm / s,這比不含TiOx的樣品低2.4倍,從而確保了載流子在沒有大量複合的情況下通過後接觸。根據這些結果,製作了具有和不具有TiOx後接觸層的異質結太陽能電池的能帶排列,界面複合的減少以及電子和空穴的阻擋結構是觀察到效率提高的主要原因。
英文摘要 In this work, we demonstrated a heterojunction Si solar cell utilizing chemically grown titanium oxide (TiOx) as an electron-selective contact layer at its rear surface. With TiOx, the rear surface was passivated to reduce carrier recombination. The reverse saturation current, which is an indicator of carrier recombination, exhibited a 4.4-fold reduction after placing a TiOx layer on the rear surface. With reduced recombination, the open-circuit voltage increased from 433 mV to 600 mV and consequently, the power conversion efficiency (PCE) increased from 9.57 to 14.70%. By x-ray photoemission spectroscopy, the surface passivation was attributed to a silicon oxide interfacial layer formed during the chemical growth process. This passivation results in a 625 cm/s surface recombination velocity for the TiOx-passivated Si surface, which is 2.4 times lower than the sample without TiOx, ensuring the carriers pass through the rear contact without extensive recombination. According to these results, the band alignment for the heterojunction solar cell with and without a TiOx rear contact layer was plotted, the reduced interfacial recombination and the electron and hole blocking structure are the main reasons for the observed efficiency enhancement.