Facility Agriculture: Energy Saving and Sterilization【Department of Applied Materials Optoelectronic Engineering, National Chi Nan University / Wuu, Dong-Sing / President / Professor】
設施農業：節能栽培與滅菌【國立暨南國際大學應用材料及光電工程學系/國立中興大學材料科學與工程學系/武東星 校長/客座教授】
論文篇名
英文：Pulsed laser deposition grown non-stoichiometry transferred ZnGa2O4 films for deep-ultraviolet applications
中文：用於深紫外應用的脈衝激光沉積生長非化學計量轉移 ZnGa2O4 薄膜
期刊名稱 APPLIED SURFACE SCIENCE
發表年份,卷數,起迄頁數 2022, 597, 153700
作者 Yen, Chao-Chun; Singh, Anoop Kumar; Chang, Hsun; Chang, Kai-Ping; Chen, Po-Wei; Liu, Po-Liang(劉柏良); Wuu, Dong-Sing(武東星)*
DOI 10.1016/j.apsusc.2022.153700
中文摘要 在非化學計量的 ZnGa2O4 靶材燒蝕過程中，Zn 揮發會導致薄膜質量和器件性能嚴重下降。這項工作突出了各種基板溫度和氧分壓對化學計量 ZnGa2O4 薄膜的微觀結構和光電特性的影響。通過第一性原理研究計算了純 Ga2O3、ZnGa2O4 和 ZnO 的每個原子的形成能，以了解脈衝激光沉積製備 ZnGa2O4 的機制，揭示了在各種生長參數下 Ga2O3 > ZnGa2O4 > ZnO 的穩定性。應引入足夠的氧分壓以沉積大量的ZnO，然後通過控制基板溫度和退火後熱處理將Ga:Zn比例調整到最合適的2:1。 X 射線衍射分析揭示了化學計量的 ZnGa2O4 薄膜的高結晶性質。高於 80% 的平均透射率和 5.18 eV 的寬能隙揭示了化學計量 ZnGa2O4 薄膜在深紫外光電探測器中的潛力。這種化學計量的ZnGa2O4 薄膜在 220 nm 的照射波長下，在 5 V 的偏置電壓下表現出 3.63×104 的光/暗電流比和 1.97 A/W 的高響應度，適用於深紫外應用。
英文摘要 It is generally known that Zn volatilization would result in a serious degradation in film quality and device performance during a non-stoichiometric ZnGa2O4 target ablation. This work highlights the effect of various substrate temperatures and partial oxygen pressures on the microstructural and optoelectronic properties of stoichiometric ZnGa2O4 films. First-principle studies have been performed to calculate the formation energy per atom of pure Ga2O3, ZnGa2O4, and ZnO to understand the mechanism of preparing ZnGa2O4 by pulsed laser deposition, revealing the stability of Ga2O3 > ZnGa2O4 > ZnO under various growth parameters. Sufficient oxygen partial pressure should be introduced to deposit a large amount of ZnO, and then the Ga:Zn ratio can be adjusted to the most suitable 2:1 by controlling the substrate temperature and post-annealing heat treatment. The X-ray diffraction analysis revealed the high crystalline nature of stoichiometric ZnGa2O4 film. The average transmittance of above 80% and wide energy gap of 5.18 eV revealed the potential of stoichiometric ZnGa2O4 film in deep-ultraviolet photodetectors. This stoichiometric ZnGa2O4 film exhibited the photo/dark current ratio of 3.63×104 and high responsivity of 1.97 A/W at the bias of 5 V under the illumination wavelength of 220 nm for deep-ultraviolet applications.
 
發表成果與本中心研究主題相關性 非化學計量的ZnGa2O4 薄膜表現出作為金屬-半導體-金屬光電探測器的最佳性能，並在深紫外光應用中具有巨大的潛力，也代表ZnGa2O4 薄膜作為金屬-半導體-金屬光電探測器可應用於農業之在深紫外光環境感測之應用。