Novel Material Agriculture: Novel Environment Friendly Material and  Safety Evaluation【Department of Physics / Ho, Mon-Shu / Professor】
新穎材料農業：友善環境農業新穎材料研發與安全評估【物理學系/何孟書教授】
論文篇名 The mechanism underlying silicon oxide based resistive random-access memory (ReRAM)
期刊名稱 Nanotechnology
發表年份,卷數,起迄頁數 2020, 31(14), 145709
作者 Chen, Yu-Li; Ho, Mon-Shu(何孟書)*; Lee, Wen-Jay*; Chung, Pei-Fang(鍾佩芳); Balraj, Babu; Sivakumar, Chandrasekar(陳德森)
DOI 10.1088/1361-6528/ab62ca
中文摘要 在這研究工作中，我們討論Cu/SiOx 奈米顆粒/Si 和 Si/SiOx奈米顆粒/Si 異質結結構的兩種 ReRAM 模型的理論電阻開關特性，其中二氧化矽奈米顆粒的介電層在雙晶處存在錯位接口。為了驗證理論模型，我們製備具有 Cu/SiOx/Si 結構的電荷存儲器件，並研究其 ReRAM 特性。我們對電阻開關的電、熱和結構方面的研究發現，開關行為依賴於開關層的材料特性和電子組態特性，金屬電極和介電材料內晶粒的界面結構也在這篇文章中被討論。我們還確定在晶界 (GB) 處施加外部電場對電阻切換行為至關重要。此外，我們已經證明，在原子長度尺度和皮秒時間尺度上，開關行為受原子結構和電子特性變化的影響。我們的研究結果為該技術中使用的材料的未來開發和優化提供了有用的參考。
英文摘要 In this work, we have inspected the theoretical resistive switching properties of two ReRAM models based on heterojunction structures of Cu/SiOx nanoparticles (NPs)/Si and Si/SiOx NPs/Si, in which dielectric layers of the silica nanoparticles present dislocations at bicrystal interfaces. To validate the theoretical model, a charge storage device with the structure Cu/SiOx/Si was fabricated and its ReRAM properties were studied. Our examinations on the electrical, thermal and structural aspects of resistive switching uncovered the switching behavior relies upon the material properties and electrical characteristics of the switching layers, as well as the metal electrodes and the interfacial structure of grains within the dielectric materials. We also determined that the application of an external electric field at Grain Boundaries (GB) is crucial to resistive switching behavior. Moreover, we have demonstrated that the switching behavior is influenced by variations in the atomic structure and electronic properties, at the atomic length scale and picosecond timescale. Our findings furnish a useful reference for the future development and optimization of materials used in this technology.
發表成果與本中心研究主題相關性
  1. Simulation of atom interaction in nanostructure systemis an important issue to understand binding influence in system.
  2. Here in our study we examined the switching mechanism underlying at the nanocrystalline grains of silica nanoparticles using molecular dynamics simulation.
  3. We inspected the Cu/Silica NPs/Si and Si/Silica NPs/Si systems. The former system is a special structure where the active Cu metal electrode expected to diffuse and form metal filament into the insulating layer, nonetheless not observed due to the nanocrystalline dislocations at the bicrystal interface dominates in the electronic charge transportation. Only a feeble quantity of diffusion observed at Cu and silica NPs interface.
  4. Moreover, we have demonstrated that the mechanism underlying resistive switching in the dielectric layers is mainly based on the relocation of defect structures induced by electric and thermal effects.