【學術亮點】High detectivity Ge photodetector at 940 nm achieved by growing strained-Ge with a top Si stressor | IDCSA, NCHU

【學術亮點】High detectivity Ge photodetector at 940 nm achieved by growing strained-Ge with a top Si stressor 2024-03-11

Facility Agricultural: Green Energy Development and Carbon Offset【Graduate Institute of Optoelectronic Engineering / Pei, Zingway / Distinguished Professor】
設施農業：農業綠能開發與碳匯補償【光電工程研究所/裴靜偉特聘教授】

論文篇名	英文：High detectivity Ge photodetector at 940 nm achieved by growing strained-Ge with a top Si stressor 中文：透過使用頂部 Si 應力源生長應變 Ge 實現 940 nm 處的高探測率 Ge 光電探測器
期刊名稱	OPTICS EXPRESS
發表年份,卷數,起迄頁數	2024, 32(6). 10490-10504
作者	Hsu, Ching-Yu; Lai, Bo-Rui; Li, Guan-Yu; Pei, Zingway(裴靜偉)*
DOI	10.1364/OE.517896
中文摘要	我們開發了一種具有高探測率的自供電近紅外線光電探測器 (PD)，覆蓋一層厚矽層於鍺上形成有拉伸應變鍺層。矽層充當應力源，並透過形成粗糙表面以最小的位錯來保持 Ge 的應變。透過拉曼光譜，我們確認Ge層具有1.83%的面內拉伸應變。鍺 PD 在 -1 V 偏壓、940 nm 波長下表現出 0.45 A/W 的高響應度。 PD 的低暗電流密度在 -1 V 時為 ∼1.50 × 10−6 A/cm²。高響應度和低暗電流導致探測率高達6.55 × 1011 cmHz^1/2/W。這種 Ge PD 在光探測和測距 (LiDAR)、物聯網 (IoT) 和光學感測網路方面具有巨大的應用潛力。
英文摘要	We have developed a self-powered near-infrared photodetector (PD) with high detectivity using a tensile strained Ge layer capped with a thick Si layer. The Si layer acts as a stressor and maintains the strain of Ge with minimal dislocations by creating a rough surface. By using Raman spectroscopy, we confirmed that the Ge layer has a 1.83% in-plane tensile strain. The Ge PD exhibits a high responsivity of 0.45 A/W at -1 V bias voltage for 940 nm wavelength. The PD's dark current density is as low as ∼1.50 × 10−6 A/cm² at -1 V. The high responsivity and low dark current result in a detectivity as high as 6.55 × 10¹¹ cmHz^1/2/W. This Ge PD has great potential for applications in light detection and ranging (LiDAR), Internet of Things (IoTs), and Optical Sensing Networks.
發表成果與本中心研究主題相關性	研究重點在於製作高檢測率的紅外光鍺偵測器。元件在940 nm 波長展現高響應度極高檢測率，適合用來設計高密度紅外光偵測器陣列，可應用於光達系統，對於偵測與分析動物行為具有相當大的作用。