設施農業：節能栽培與滅菌【材料系武東星特聘教授】
論文篇名 英文：Improved Performance of Deep Ultraviolet Photodetector From Sputtered Ga2O3 Films Using Post-Thermal Treatments
中文：藉由後退火處理濺鍍氧化鎵薄膜並提升深紫外光感測器之效能
期刊名稱 IEEE Photonics Journal
發表年份,卷數,起迄頁數 2019, 11, 1-8
作者 Hui Li, Po-Wei Chen, Shuo-Huang Yuan, Tsun-Min Huang, Sam Zhang, and Dong-Sing Wuu*
DOI 10.1109/JPHOT.2019.2948193
中文摘要 在藍寶石基板上使用濺鍍方法沉積氧化鎵薄膜，並進一步分析不同後退火溫度之變化，再以金屬-半導體-金屬之結構製作光感測器。隨退火溫度從700℃升高至1000℃，爐管退火之氧化鎵光感測器性能隨之下降，此由於鋁擴散和結構多晶化所導致的負面影響。使用快速退火的氧化鎵光感測器，在800℃時，即為準單晶態，得到最好的元件性能，而光暗電流比為1.78×105 (@ 5V and 230 nm)，光響應度為0.553 A/W,以及快速的瞬時反應(上升/下降時間: 0.2 s/0.1 s) 。此研究結果相較於之前用濺射法製備的氧化鎵光感測器有較好的性能，表示透過快速熱退火製備準單晶氧化鎵薄膜具有高度潛力應用於深紫外光感測器元件上。
英文摘要 The metal-semiconductor-metal photodetectors based on the sputtered gallium oxide films on sapphire substrates after various post-thermal treatments have been investigated. The photodetector performance of the furnace-annealed gallium oxide sample degraded with the increase of annealing temperature from 700 to 1000 °C, resulting from the adverse effect of the aluminum cross-diffusion and polycrystalline formation. By rapid thermal annealing at 800 °C, the gallium oxide film can achieve an optimum photodetector performance with the photo/dark current ratio of 1.78 × 105 (@5 V and 230 nm), responsivity of 0.553 A/W, and fast transient response (rise/fall time: 0.2 s/0.1 s). The result is comprehensively better than the previous reports by sputtering, which demonstrates that the quasi-single-crystalline gallium oxide film via rapid thermal process has high potential for deep-ultraviolet photodetector applications.