設施農業：農業綠能開發與碳匯補償【光電工程研究所/裴靜偉特聘教授】
| 論文篇名 | High-Efficiency Broadband Infrared Thin-Film Germanium Photodetector Enhanced by a Resonant Cavity and a Nano-Slit Metasurface |
| 期刊名稱 | IEEE Access |
| 發表年份,卷數,起迄頁數 | 2024, 12, 156904 - 156914 |
| 作者 | Hsu, Ching-Yu; Pei, Zingway(裴靜偉)*; Liu, Jia-Ming |
| DOI | 10.1109/ACCESS.2024.3479272 |
| 中文摘要 | 本文提出了一種用於高量子效率和寬頻 Ge-on-Si 光電探測器的新穎設計。該設計需要在獨立諧振腔增強 （RCE） Ge 結構上放置一個 SiO2 填充的納米狹縫超表面，以在 1000-1600 nm 的寬光譜範圍內實現高量子效率。這種設計解決了具有 Fabry-Perot 腔的傳統 RCE 器件的窄諧振線寬的局限性。SiO2 填充的超表面引入了入射光場與水平導向模式的衍生和附加相位匹配，從而增強了法布里-珀羅模式的非共振波長處與有源區域的光耦合。採用這種設計的器件在 1000–1600 nm 光譜範圍內的平均量子效率為 73.28%，最低量子效率約為 60%，比沒有超表面結構的器件高出三倍。1300 nm 左右的量子效率達到 76.65%，1550 nm 左右的量子效率達到 98.69%。估計的回應度分別為 0.81 A/W 和 1.23 A/W。對於高速應用，由 600 nm 厚度的薄 Ge 層以下的 Si 墊片組成的器件旨在在 55 GHz 的頻寬下工作。該元件的平均量子效率為 64.96%，最小量子效率約為 60%。其峰值量子效率在 1300 nm 左右達到 92.61%，在 1550 nm 左右達到 94.65%。相應的估計回應度分別為 0.98 A/W 和 1.18 A/W。這兩種設計都是在寬光譜範圍內具有高量子效率的高速紅外光電探測器的創新解決方案。 |
| 英文摘要 | This paper presents a novel design for high-quantum-efficiency and broadband Ge-on-Si photodetectors. The design entails placing a SiO2-filled nano-slit metasurface on a free-standing resonant- cavity enhanced (RCE) Ge structure to achieve high quantum efficiency in a broad spectral range of 1000–1600 nm. This design addresses the limitations of narrow resonance linewidths for conventional RCE devices with Fabry–Perot cavities. The SiO2-filled metasurface introduces diffraction and additional phase matching of the incident light field to horizontal guided modes, thus enhancing light coupling to the active region at non-resonance wavelengths of the Fabry-Perot mode. The device with this design exhibits an average quantum efficiency of 73.28 % in the 1000–1600 nm spectral range and a minimum quantum efficiency of approximately 60%, which is three times higher than a device without the metasurface structure. The quantum efficiency at around 1300 nm reaches 76.65%, and that at around 1550 nm reaches 98.69%. The estimated responsivity is 0.81 A/W and 1.23 A/W, respectively. For high-speed applications, a device comprising a Si spacer below a thin Ge layer of 600 nm thickness is aimed for operation at a bandwidth of 55 GHz. This device exhibits an average of 64.96% quantum efficiency with a minimum quantum efficiency of around 60%. Its peak quantum efficiency reaches 92.61% at around 1300 nm and 94.65% at around 1550 nm. The corresponding estimated responsivity is 0.98 A/W and 1.18 A/W, respectively. Both designs are innovative solutions for high-speed infrared photodetectors of high quantum efficiency over a broad spectral range. |
| 發表成果與本中心研究主題相關性 | 研究重點在於製作高檢測率的紅外光鍺偵測器設計。元件在1100-1600 nm 波長展現高響應度，適合用來設計水溶液中的廢棄物，對於永續環境的偵測與分析具有相當大的作用。 |
