Facility Agriculture: Energy Saving and Sterilization【Department of Chemical Engineering / Chen, Chih-Ming / Distinguished Professor】
設施農業：節能栽培與滅菌【化學工程學系/陳志銘特聘教授】
論文篇名 英文：Organosiloxane nanolayer as diffusion barrier for Cu Metallization on Si
中文：有機矽氧烷奈米層作為矽上銅金屬層之擴散阻障
期刊名稱 Applied Surface Science
發表年份,卷數,起迄頁數 2021, 567, no.150800
作者 Zhang, Yan-Ping; Sil, Manik Chandra; Chen, Chih-Ming(陳志銘)*
DOI 10.1016/j.apsusc.2021.150800
中文摘要 人工智慧、大數據與智能載具等新興科技的發展，對高效能積體電路的要求越來越高。為實現這一目標，增加集成密度之銅互連技術與擴散阻擋層之超小型化勢在必行。在本研究中，我們證明超薄有機矽氧烷奈米層對銅向矽的擴散表現出優異的阻障功效。水解之有機矽氧烷奈米層通過脫水反應以共價鍵連接在二氧化矽表面，有機矽烷的末端胺用於吸附具催化能力之鈀奈米團簇，以完成矽上的銅金屬化。對矽/二氧化矽/有機矽氧烷/銅接合點進行快速熱退火以評估擴散阻障的功效，根據微觀結構和晶體學分析，具有較短烷基鏈的有機矽氧烷奈米層表現出較佳的阻障功效，阻障失效溫度可達923 K，在該溫度下發生銅擴散同時生成銅矽化合物。本研究亦透過能量最小化之計算，建構二氧化矽表面各種烷基鍊長度的有機矽烷分子的接枝結構，並合理化解釋擴散阻障的功效。
英文摘要 Development of emerging technologies such as artificial intelligence, big data, and smart vehicles brings increasing demands on high-performance integrated circuits (ICs). To achieve this goal, ultra-miniaturization of Cu interconnects as well as diffusion barrier layer to increase the integration density is imperative. In this study, we demonstrate that an ultrathin organosiloxane nanolayer exhibits excellent barrier efficacy against the active diffusion of Cu towards Si. The organosiloxane nanolayer is constructed on the SiO2 surface using dehydration to covalently tether the hydrolyzed organosilane molecules. The amine termini of organosilanes are used to adsorb catalytic Pd nanocluster to accomplish the Cu metallization on Si. Rapid thermal annealing is performed with respect to the Si/SiO2/organosiloxane/Cu junctions to evaluate the efficacy of diffusion barrier. Based on microstructural and crystallographic examinations, the organosiloxane nanolayer with a shorter alkyl chain performs better with a higher breakdown temperature of 923 K at which the Cu diffusion and the Cu silicide formation at the junctions occur. The grafting conformations of organosilane molecules with various alkyl chain lengths on the SiO2 surface are constructed based on energy minimization calculations to rationalize the diffusion barrier efficacy.
發表成果與本中心研究主題相關性 此一研究成果係開發前瞻晶片封裝技術，可應用於各類新興元件，增加元件可靠度。