Facility Agriculture: Energy Saving and Sterilization【Department of Applied Materials Optoelectronic Engineering, National Chi Nan University / Wuu, Dong-Sing / President / Professor】
設施農業：節能栽培與滅菌【國立暨南國際大學應用材料及光電工程學系/國立中興大學材料科學與工程學系/武東星 校長/客座教授】
論文篇名 英文：The Effect of Annealing Ambience on the Material and Photodetector Characteristics of Sputtered ZnGa2O4 Films
中文：退火環境對濺射 ZnGa2O4 薄膜材料和光電探測器特性的影響
期刊名稱 Nanomaterials
發表年份,卷數,起迄頁數 2021, 11, no.2316
作者 Singh, Anoop Kumar; Huang, Shiau-Yuan; Chen, Po-Wei; Chiang, Jung-Lung; Wuu, Dong-Sing(武東星)*
DOI 10.3390/nano11092316
中文摘要 尖晶石ZnGa2O4薄膜在400℃的基板溫度下利用射頻磁控濺射在c平面藍寶石基板上生長。在700℃的退火溫度下進行熱退火以提高它們的晶體質量。在空氣、氮氣和氧氣等各種環境中研究熱退火對 ZnGa2O4 薄膜的微觀結構和光電性能的影響。退火後的 ZnGa2O4 薄膜的 X 射線衍射圖顯示其晶體結構具有 (111) 晶面。穿透式電子顯微照片證實，在空氣環境下退火的 ZnGa2O4 薄膜具有准單晶結構。這種在空氣環境下退火的 ZnGa2O4 薄膜表現出光滑的表面，在可見光區具有超過 82% 的優異平均透射率和 5.05 eV 的寬帶隙。通過 X 射線光電子能譜研究，揭示了不同退火環境下的氧空位對材料和光電探測器特性的重大影響。當在空氣環境下退火時，ZnGa2O4 薄膜表現出作為金屬-半導體-金屬光電探測器的最佳性能。在這些條件下，ZnGa2O4 薄膜表現出~104的高光/暗電流比，以及在 240 nm 入射光下在 5 V 偏壓下具有 2.53 A/W 的高響應率。這些結果表明准單晶 ZnGa2O4 薄膜在深紫外光應用中具有巨大的潛力。
英文摘要 Spinel ZnGa2O4 films were grown on c-plane sapphire substrates at the substrate temperature of 400℃ by radio-frequency magnetron sputtering. Post thermal annealing was employed at the annealing temperature of 700℃ in order to enhance their crystal quality. The effect of thermal annealing on the microstructural and optoelectronic properties of ZnGa2O4 films was systematically investigated in various ambiences, such as air, nitrogen, and oxygen. The X-ray diffraction patterns of annealed ZnGa2O4 films showed the crystalline structure to have (111) crystallographic planes. Transmission electron micrographs verified that ZnGa2O4 film annealed under air ambience possesses a quasi-single-crystalline structure. This ZnGa2O4 film annealed under air ambience exhibited a smooth surface, an excellent average transmittance above 82% in the visible region, and a wide bandgap of 5.05 eV. The oxygen vacancies under different annealing ambiences were revealed a substantial impact on the material and photodetector characteristics by X-ray photoelectron spectrum investigations. ZnGa2O4 film exhibits optimal performance as a metal-semiconductor-metal photodetector when annealed under air ambience. Under these conditions, ZnGa2O4 film exhibits a higher photo/dark current ratio of ~104 order, as well as a high responsivity of 2.53 A/W at the bias of 5 V under an incident optical light of 240 nm. These results demonstrate that quasi-single-crystalline ZnGa2O4 films have significant potential in deep-ultraviolet applications.
發表成果與本中心研究主題相關性 本研究利用射頻磁控濺鍍系統在400℃製程下沉積ZnGa2O4薄膜於藍寶石基板上，在700℃下進行熱退火以提高它們的晶體品質。並在空氣、氮氣和氧氣等各種環境中研究熱退火對 ZnGa2O4 薄膜的微觀結構和光電性能的影響。在空氣環境下退火的 ZnGa2O4 薄膜表現出光滑的表面，在可見光區具有超過 82% 的優異平均透射率和 5.05 eV 的寬能隙， 且ZnGa2O4 薄膜表現出作為金屬-半導體-金屬光電探測器的最佳性能，並在深紫外光應用中具有巨大的潛力，也代表ZnGa2O4 薄膜作為金屬-半導體-金屬光電探測器可應用於農業之在深紫外光環境感測之應用。