新穎材料農業:友善環境農業新穎材料研發與安全評估【物理學系/何孟書教授】
論文篇名 | VLS growth of pure and Au decorated β-Ga2O3 nanowires for room temperature CO gas sensor and resistive memory applications |
期刊名稱 | Applied Surface Science |
發表年份,卷數,起迄頁數 | 2020, 533(15) 147476 |
作者 | Weng, Tzu-Feng; Ho, Mon-Shu(何孟書)*; Sivakumar, Chandrasekar(陳德森); Balraj, Babu; Chung, Pei-Fang(鍾佩芳) |
DOI | 10.1016/j.apsusc.2020.147476 |
中文摘要 | 通過汽-液-固生長法在矽(1 0 0)基板上成長了高密度單晶β-Ga2O3奈米線。我們研究純 β-Ga2O3 奈米線以及 Au 修飾的 β-Ga2O3 奈米線的結構表徵。並將陣列和單奈米線器件的純奈米線和 Au 裝飾奈米線其製成室溫 (RT) 下的 CO 氣體傳感器。一維奈米結構的直徑範圍約為 127 ± 5 nm。材料特性使用場發射掃描電子顯微鏡 (FESEM)、透射電子顯微鏡 (TEM)、能量色散 X 射線光譜 (EDS)、漸進入射 X 射線衍射 (GI-XRD)、光致發光 (PL)、拉曼研究合成的納米線光譜和 X 射線光電子能譜 (XPS)觀測。單奈米線氣體傳感器裝置元件利用聚焦離子束 (FIB) 技術製造。Au 修飾的 β-Ga2O3 奈米線的 RT CO 氣體傳感器在室溫下對 100 ppm CO 氣體有相當顯著的靈敏度。此外,我們比較了網狀 Au 修飾 β-Ga2O3 奈米線與單根 Au 修飾 β-Ga2O3 奈米線和單根純 β-Ga2O3 奈米線的 RT CO 氣敏特性。並與 Au/純 β-Ga2O3 納米線/p-Si 和 Au/Au 修飾的β-Ga2O3 奈米線/p-Si 結構的雙極電阻開關特性作比較。 |
英文摘要 | High-density single crystalline β-Ga2O3 nanowires on silicon (1 0 0) substrates were grown by vapour-liquid- solid growth method. We have characterized the pure β-Ga2O3 nanowires along with the Au-decorated β-Ga2O3 nanowires. The CO gas sensors at room temperature (RT) have been studied for pure and Au decorated nano- wires with multiple-networked array and single nanowire devices. The diameter of the 1D nanostructure ranged from 127 ± 5 nm. The synthesized nanowires were studied using Field Emission Scanning Electron Microscope (FESEM), Transmission Electron Microscope (TEM), Energy Dispersive X-ray Spectroscopy (EDS), Gracing Incidence X-ray Diffraction (GI-XRD), Photoluminescence (PL), Raman spectroscopy and X-ray Photoelectron Spectroscopy (XPS). Using the Focussed Ion Beam (FIB) technique, single nanowire gas sensor devices were fabricated. Single nanowire RT CO gas sensors using the proposed Au decorated β-Ga2O3 nanowire achieved remarkable sensitivity for 100 ppm CO gas at room temperature. Besides, we have compared the RT CO gas sensing properties of multiple-networked Au decorated β-Ga2O3 nanowires with single Au-decorated β-Ga2O3 nanowire and single pure β-Ga2O3 nanowire. In addition, bipolar resistive switching property is inspected for the Au/pure β-Ga2O3 nanowires/p-Si and Au/Au decorated β-Ga2O3 nanowires/p-Si structures. |
發表成果與本中心研究主題相關性 |
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