Novel Material Agriculture: Novel Environment Friendly Material and  Safety Evaluation【Department of Physics / Ho, Mon-Shu / Professor】
新穎材料農業：友善環境農業新穎材料研發與安全評估【物理學系/何孟書教授】
論文篇名 One step hydrothermal preparation of NiO nanostructures for NextGen resistive switching device applications
期刊名稱 J. of Alloys and Compounds
發表年份,卷數,起迄頁數 2021, 885, 161012
作者 Sivakumar, Chandrasekar(陳德森); Balraj, Babu; Chung, Pei-Fang(鍾佩芳); Bharathi, Mohanbabu; Kumar, Mohanraj; Nagarajan, Senthil Kumar; Guo, Donghui; Ho, Mon-Shu(何孟書)*
DOI 10.1016/j.jallcom.2021.161012
中文摘要 尋找新型功能奈米結構材料來生產具有成本效益、可靠及高性能的電子元件, 對於未來的科技發展至關重要。由於傳統記憶存儲技術在量子力學和物理限制的都存在製作的困難，發展新式有前途的下一代存儲技術是時代所需。在本研究中，NiO 奈米盤 (NDs) 和奈米環 (NRs) 通過簡單的水熱合成法製成，我們使用 XRD、XPS、SEM、EDS 和 TEM 對樣品進行表徵檢測。並在 n-Si (100) 基板上將ND 和 NR 均勻分散，然後在奈米材料層上熱沉積 Au 當作頂部電極來製造夾心結構的 ReRAM 器件。在兩種製造的器件中, 我們都觀察到元件形成雙極性電阻開關。其中在退火的 NRs 中所產生的氧缺陷點是優異的開關和導通絲線形成的原因。最後，我們通過晶格中存在的氧離子和氧缺陷點構建和湮滅導電細絲以及製造的器件在正負偏壓下的能帶結構排列來說明開關機制。我們提出的低成本水熱法生產NiO 奈米結構的 ReRAM 是下一代記憶存儲設備的強力候選者。
英文摘要 The need of finding novel functional nanostructured materials to produce cost effective, reliable and high- performance devices are crucial for the future developments. Since the conventional memory technology struggles in various aspects of quantum mechanical and physical limitations, promising next generation memory technology is in high demand. In this study, NiO nanodisks (NDs) and nanorings (NRs) are syn- thesized by a straightforward hydrothermal route, and the products are characterized using XRD, XPS, SEM, EDS, and TEM. The sandwich structured ReRAM devices have been fabricated by the dispersion of homo- genous NDs and NRs on n-Si (100) substrate (bottom electrode) followed by the thermal deposition of Au top electrode on the active layer. Forming free bipolar resistive switching is observed in both fabricated devices; later the device performance has been studied systematically at room temperature and elaborated in detail. Oxygen vacancy produced in the annealed NRs is accounted for the superior switching and conducting filament formation. Finally, we have illustrated the switching mechanism through the con- struction and annihilation of conductive filaments by oxygen ions and oxygen vacancies present in the crystal lattice along with the band structure alignment of the fabricated device under positive and negative bias followed by the discussion on the fabricated NiO nanostructures. Our proposed NiO nanostructure based ReRAM produced by low-cost one-step hydrothermal method is a promising candidate for the next generation information storage devices.
發表成果與本中心研究主題相關性
  1. NiO NRs and NDs are important material for Biosensing devices.
  2. Devices consist of metal oxide nanostructures are less explored than that of devices made of thin film. Herein, we have reported the resistive memory fabricated from technologically important NiO nanostructures.
  3. The physical and chemical characteristics of as-prepared nanodisk and annealed nanoring structures are noticeably distinguished.
  4. The crucial oxygen composition is tuned and tailored in a way to produce an effective non-volatile memory device
  5. The forming free resistive switching of both nanostructures is compared, and the disparities are emphasized.
  6. The physical mechanism of the fabricated resistive memory device based on band structure alignments and the role of oxygen vacancies tailored by the thermal annealing processes is illustrated in detail.