設施農業：農業綠能開發與碳匯補償【光電工程研究所/裴靜偉特聘教授】
| 論文篇名 | 英文：High-absorbance resonant-cavity-enhanced free-standing Ge photodetector for infrared detection at 1550 nm wavelength |
| 期刊名稱 | AIP ADVANCES |
| 發表年份,卷數,起迄頁數 | 2023,13(7),75006 |
| 作者 | Hsu, Ching-Yu; Pei, Zingway(裴靜偉)*; Liu, Jia-Ming* |
| DOI | 10.1063/5.0152110 |
| 英文摘要 | A novel free-standing resonant-cavity-enhanced (RCE) Ge thin-film absorber is designed with a bottom distributed Bragg reflector (DBR) for infrared photodetection at 1550 nm wavelength based on a Si substrate. The free-standing structure offers a high degree of freedom in optimizing the number of periods, the layer arrangement, and the thickness of each layer of the DBR. A SiO2/Si DBR that is compatible with Si processing technology is used on the bottom of the Ge thin film to construct the RCE structure. Based on our theoretical study, the SiO2 low-index layer must be placed next to the Ge layer to utilize the large difference in the refractive indices between SiO2 and Ge to achieve high reflectance for the DBR. In this design, the structure can reach an absorbance of 85.90% with a DBR of three periods on the bottom and an antireflective oxide layer on the top surface of the Ge layer. Without the antireflective oxide layer, the absorbance is increased to 99.17%. The design paves the way for high-responsivity Ge infrared photodetectors in Si-based photonic systems. |
| 發表成果與本中心研究主題相關性 | 研究重點在於設計高響應度的紅外光偵測器。所設計的結構具有相當高的光捕捉能力，適合用來設計高密度紅外光偵測器列，可應用於光打系統，對於偵測與分析動物行為具有相當大的作用。 |
