設施農業：節能栽培與滅菌【材料科學與工程學系武東星教授】

論文篇名 英文：Effects of high substrate temperature during pulsed laser deposition on the quality of aluminum-doped gallium oxide and its photodetector characteristics
中文：經由脈衝雷射沉積法使高基板溫度對鋁摻雜氧化鎵品質之影響及其光電感測器特性
期刊名稱 Japanese Journal of Applied Physics
發表年份,卷數,起迄頁數 2018, 57, 70301
作者 Shuo-Huang Yuan, Sin-Liang Ou, Chao-Chun Wang, Shiau-Yuan Huang, Chien-Ming Chen(陳志銘), Ku-Yen Lin, Yi-An Chen, and Dong-Sing Wuu*(武東星)
DOI 10.7567/JJAP.57.070301
中文摘要 我們發表利用脈衝雷射沉積法改變不同基板溫度（600-800°C）製備鋁摻雜氧化鎵（AGO）薄膜對於金屬-半導體-金屬光電偵測器（PDs）的影響。 AGO膜的結晶品質可透過提高基板溫度來改善。由於AGO（400）的出現，AGO(2 ̅01)的d-間距減小，而該平面的應變增加。上述現象可透過在膜中形成AGO（400）平面造成AGO(2 ̅01)平面產生壓縮應變來解釋。AGO PD在240 nm波長處顯示出最大吸收，並且增強的結晶品質將有益於元件性能。
英文摘要 We report on the effects of substrate temperature (600–800 °C) on metal–semiconductor–metal photodetectors (PDs) fabricated with aluminum doped gallium oxide (AGO) films by pulsed laser deposition. The crystal quality of the AGO films was improved by increasing the substrate temperature. Because of the AGO (400) appearance, the d-spacing of AGO(2 ̅01)decreased, whereas the strain of this plane increased. This could be explained by the formation of the AGO (400) plane in the films, generating a compressive strain in the AGO(2 ̅01) plane. The AGO PDs showed a maximum absorption at a wavelength of 240 nm, and the enhanced crystal quality would benefit the device performance.