設施農業：節能栽培與滅菌【材料科學與工程學系/武東星特聘教授】
| 論文篇名 | 英文：Process Integration and Interconnection Design of Passive-Matrix LED Micro-Displays With 256 Pixel-Per-Inch Resolution 中文：製程整合及電極內連線設計具256像素密度之被動式微型發光二極體顯示器 |
| 期刊名稱 | IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY |
| 發表年份,卷數,起迄頁數 | 2020, 8 (1), 251-255 |
| 作者 | Yuan, Shuo-Huang; Yan, Shih-Siang; Yao, Yu-Shiuan; Wu, Chung-Cheng; Horng, Ray-Hua; Wuu, Dong-Sing(武東星)* |
| DOI | 10.1109/JEDS.2020.2967476 |
| 中文摘要 | 在此研究中，成功製作了具有0.28英寸InGaN的藍色micro-LED顯示器，該顯示器具有256像素密度和100 μm的間距。 厚的Ti / Al / Ti / Au內連金屬沉積在n型氮化鎵（n-GaN）區域上，以降低互連電阻。 與傳統金屬相比，具有互連金屬的micro-LED陣列具有更好的電性能一致性。 在全點亮模式下在1mA電流注入下測得的micro-LED的輸出功率、正向電壓和外部量子效率分別為0.8 mW，3.0 V和10％。 該技術具有將基於InGaN的LED與量子點集成在一起的潛力，可用於全彩應用。 |
| 英文摘要 | A 0.28-inch InGaN-based blue micro-LED display with 256 pixel-per-inch resolution and a pitch of 100 μm was successfully fabricated in this study. A thick Ti/Al/Ti/Au interconnection metal was deposited on the n-type gallium nitride (n-GaN) region to reduce the interconnection resistance. The micro-LED array with interconnection metal exhibits better electrical property consistency as compared with that of the traditional one. The output power, forward voltage, and external quantum efficiency of micro-LED, which measured under 1-mA current injection with the full lighting mode, are 0.8 mW, 3.0 V, and 10%, respectively. This technique has the potential to integrate InGaN-based LEDs with quantum dots for full-color applications. |
