設施農業：綠能設施開發【材料科學與工程學系賴盈至教授/優聘教師】
| 論文篇名 | 英文：Highly radiation-tolerant polymer field-effect transistors with polystyrene dielectric layer 中文：高耐輻射聚合物場效應晶體管 |
| 期刊名稱 | NANO ENERGY |
| 發表年份,卷數,起迄頁數 | 2022, 100, 107452 |
| 作者 | Li, Wenwu; Huang, Fanming; Gao, Caifang; Sun, Yabin; Guo, Xiaojun; Chen, Yi-Ting; Chu, Junhao; Lai, Ying-Chih(賴盈至)* |
| DOI | 10.1016/j.nanoen.2022.107452 |
| 中文摘要 | 在極端輻照環境下的電子應用中，對耐輻射器件的需求很高，但傳統的矽晶體管無法滿足器件要求。 在這項工作中，我們系統地研究有機場效應晶體管的總電離劑量 (TID) 響應。 通使用聚苯乙烯作為其柵極介電層製造的 PFET ，即使在暴露於 7.5 Mrad 的 TID 後仍可保持 95% 以上的電性。 輻照設備的保質期超過 1000 天。 利用成果製作的逆變器電路，展現出對 7.5 Mrad 的高 TID 耐受性。 這項工作為用於輻照環境的 有機場效應晶體管提供可能的解決方案。 |
| 英文摘要 | There is high demand for radiation-tolerant devices for use in electronic applications in extreme irradiation environments, but conventional silicon transistors cannot satisfy the device requirements. In this work, we systematically investigated the total ionizing dose (TID) responses of polymer field-effect transistors (PFETs). By selecting suitable polymer gate dielectric materials (especially PS), it is found that these PFETs show significantly improved tolerances to the TID. Specifically, a PFET fabricated using polystyrene as its gate dielectric layer can maintain more than 95% of its electrical performance even after exposure to a TID of 7.5 Mrad (SiO2). The irradiated device has a long shelf lifetime that exceeds 1000 days. Simple inverter circuits were also fabricated and also demonstrated tolerance to a high TID of 7.5 Mrad. This work provides a possible solution for the development of PFETs for applications in extreme irradiation environments. |
| 發表成果與本中心研究主題相關性 | 實現輻射環境下的有機電晶體，有助實現農場物聯網。 |
