設施農業：節能栽培與滅菌【材料系武東星特聘教授】
論文篇名 英文：Growth and Photocatalytic Properties of Gallium Oxide Films Using Chemical Bath Deposition
中文：使用化學水浴法製備氧化鎵薄膜並分析其成長及光催化特性
期刊名稱 Crystals
發表年份,卷數,起迄頁數 2019, 9, 1-9
作者 Che-Yuan Yeh, Yi-Man Zhao, Hui Li, Fei-Peng Yu, Sam Zhang, and Dong-Sing Wuu*
DOI 10.3390/cryst9110564
中文摘要 採用化學水浴法和退火後處理在玻璃基板上製備了氧化鎵薄膜。從場發射掃描電鏡和X射線衍射的結果可以看出，在較高濃度(0.05 M)硝酸鎵的實驗條件下可以得到結晶度較好的GaOOH奈米棒前驅體。低濃度硝酸鎵條件下合成的GaOOH在退火溫度(400 - 600℃)下沒有轉變成α-Ga2O3。在較高的硝酸鎵濃度(0.05 M)和較高的退火溫度(500℃)下，GaOOH可以成功的轉化為Ga2O3膜。濃度為0.075 M的硝酸鎵和0.5 M的環六亞甲基四胺條件下製備的α-Ga2O3在500℃退火後具有最佳的結晶度，而且具有最高的長寬比為5.23。α-Ga2O3薄膜的在亞甲藍基溶液中的光降解效率可以達到90%。
英文摘要 Gallium oxide (Ga2O3) thin films were fabricated on glass substrates using a combination of chemical bath deposition and post-annealing process. From the field-emission scanning electron microscopy and x-ray diffraction results, the GaOOH nanorods precursors with better crystallinity can be achieved under higher concentrations (0.05 M) of gallium nitrate (Ga(NO3)3). It was found that the GaOOH synthesized from lower Ga(NO3)3 concentration did not transform into α-Ga2O3 among the annealing temperatures used (400-600°C). Under higher Ga(NO3)3 concentrations (0.05 M) with higher annealing temperatures (500 °C), the GaOOH can be transformed into the Ga2O3 film successfully. An α-Ga2O3 sample synthesized in a mixed solution of 0.075 M Ga(NO3)3 and 0.5 M hexamethylenetetramine exhibited optimum crystallinity after annealing at 500°C, where the α-Ga2O3 nanostructure film showed the highest aspect ratio of 5.23. As a result, the photodegeneration efficiencies of the α-Ga2O3 film for the methylene blue aqueous solution can reach 90%.