【學術亮點】Unidirectional cross-interface grain growth in Cu-Cu direct bonding
Facility Agricultural: Green Energy Development and Carbon Offset【Department of Chemical Engineering / Chen, Chih-Ming/ Distinguished Professor】
設施農業：農業綠能開發與碳匯補償【化學工程學系陳志銘 特聘教授】
| 論文篇名 | 英文： Unidirectional cross-interface grain growth in Cu-Cu direct bonding 中文：銅-銅直接鍵合中的單向跨界面晶粒成長 |
| 期刊名稱 | Journal of Materials Research and Technology |
| 發表年份,卷數,起迄頁數 | 2025, 38, 2212-2219 |
| 作者 | Chang, Jia-Syuan; Song, Jenn-Ming(宋振銘); Chen, Chih-Ming(陳志銘)* |
| DOI | 10.1016/j.jmrt.2025.08.073 |
| 中文摘要 | 銅-銅直接鍵結在先進的晶片堆疊技術中發揮至關重要的作用，因為該技術可以顯著縮短訊號傳輸路徑、減少連接間距並改善熱阻。透過跨界面晶粒生長消除鍵合界面對於實現可靠且堅固的銅-銅連接至關重要。然而，由於使用兩個紋理相似的銅表面進行直接鍵合，通常會觀察到尖銳或部分鋸齒狀的鍵結界面。在本研究中，我們展示一種鍵合策略，使用兩個紋理不同（尤其是晶粒尺寸不同）的銅表面進行銅-銅直接鍵結。其中一個銅表面具有細晶粒尺寸（178 nm），晶界密度高，顯著促進界面空隙的收縮和界面晶界的形成。兩個銅表面之間較大的晶粒尺寸差異（178 nm vs 1.8 μm）產生驅動力，使鍵結界面向較小的高能量晶粒方向移動。實現顯著的單向跨界面晶粒生長，有效地消除原始的尖銳鍵合界面。我們的結果表明，晶粒工程是實現銅-銅直接一種有效的發展方向。 |
| 英文摘要 | Cu–Cu direct bonding plays a vital role in advanced chip stacking technology because it significantly shortens the signal transmission route, reduces the joint pitch, and improves the thermal resistance. Elimination of the bonding interface by cross-interface grain growth is crucial to achieve a reliable and robust Cu–Cu joint. However, sharp or partially zig-zag bonding interfaces are extensively observed as two texturally similar Cu surfaces are used for direct bonding. In this study, we demonstrate a bonding strategy by using two texturally different Cu surfaces especially with different grain sizes for Cu–Cu direct bonding. One Cu surface with a fine grain size (178 nm) has a high grain boundary density, significantly facilitating the shrinkage of interfacial voids and the formation of interfacial grain boundary. The large grain size difference between the two Cu surfaces (178 nm versus 1.8 μm) produces a driving force to move the bonding interface towards the smaller high-energy grains. Significant unidirectional cross-interface grain growth is achieved, effectively eliminating the original sharp bonding interface. Our results indicate that the grain engineering is a useful and reliable strategy for Cu–Cu direct. |
| 發表成果與本中心研究主題相關性 | 封裝銲點存在於各式能源元件與設備之中，發展高性能接合技術有助於改善元件的運作效能與信賴性。 |
