設施農業：節能栽培與滅菌【材料系武東星特聘教授】
論文篇名 英文：Influence of oxygen on sputtering of aluminum-gallium oxide films for deep-ultraviolet detector applications
中文：氧氣環境於濺鍍製程中對於氧化鋁鎵之影響並應用於身紫外線感測器
期刊名稱 Journal of Alloys and Compounds
發表年份,卷數,起迄頁數 2019, 791, 1213-1219
作者 Po-Wei Chen, Shiau-Yuan Huang, Chao-Chun Wang, Shuo-Huang Yuan, Dong-Sing Wuu*
DOI 10.1016/j.jallcom.2019.03.339
中文摘要 將氧化鎵靶材及鋁靶材透過共濺鍍製程，將氧化鋁鎵沉積於基板溫度為600度之c平面之藍寶石基板上。製程氣體為氬氣及氧氣之混合氣體。在低氧氣濃度(CO2 = [O2] / [O2 Ar]×100％)時，退火過之氧化鋁鎵具有較寬之能隙及較大之晶粒大小。因此，針對氧氣濃度對於光學及結構上對於氧化鋁鎵薄膜及對應之深紫外線感測器之影響做研究。所有之氧化鋁鎵薄膜在可見光範圍呈現高的穿透率在82%以上。當提升氧氣濃度從0%至100%，未退火之氧化鋁鎵能隙從4.56提升至5.04 eV。經過900度退火20分鐘於大氣環境下，在氧濃度為33%之製程環下成長之試片具有最高能隙為4.97 eV。發現在未退火之前的氧化鋁鎵呈現的是非晶結構。在經過退火之後，氧化鋁鎵呈現(-201)晶面家族之訊號，除了100%氧濃度環境之試片。研究結果指出，氧濃度為16%並經退火過之氧化鋁鎵薄膜具有最佳之深紫外線感測器效能，其光暗電流比達2.00 x 105及峰值響應度達1.39 A / W（在電壓為5 V和光波長為230 nm)。研究結果更指出氧濃度的調變對於氧化鋁鎵薄膜特性及深紫外線感測器特性有關鍵性之影響。
英文摘要 The aluminum-gallium oxide (AGO) films were prepared on c-plane sapphire substrates at a substrate temperature of 600 C using co-sputtering from the Ga2O3 and Al targets. The Ar and O2 mixed gas was used during the film growth. The wide optical-bandgap and the large grain-size of annealed AGO film was found in the low O2 concentration (CO2 = [O2]/[O2 Ar]
x100%). Thus, the effect of various CO2 on optical and structural properties of AGO films and related deep-ultraviolet photodetector (DUV PD) characteristics were investigated. All AGO films possessed superior transmittance above 82% in the visible region. As increasing the CO2 from 0 to 100%, the optical bandgaps of the as-deposited AGO films increased gradually from 4.56 to 5.04 eV. After post-thermal annealing in the air at 900 C for 20 min, the highest optical-bandgap of 4.97 eV was achieved for the 33%-CO2-sputtered sample. It was found that the as-deposited AGO films showed the amorphous network. After annealing, the AGO films with (-
201) plane family were observed except the sample with 100% CO2. As a result, the 16%-CO2-annealed AGO film possesses the optimum DUV PD performance, where the on/off current ratio and peak responsivity can reach 2.00 x
105 and 1.39 A/W (at 5 V and 230 nm), respectively. The results indicate that the trade-off of CO2 sputtering ambient has played an important role in determining the annealed AGO film as well as the DUV PD properties.